The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

10:00 〜 10:15

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO 2/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

○Runze Wang1, Munetaka Noguchi2, Hiroshi Watanabe2, Koji Kita1 (1. Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-05

Influences of the boron impurity concentration on SiO2/4H-SiC interface characteristics including the interface defect density and stability of flatband voltage of the MOS capacitors were investigated, utilizing concentration tunable boron-diffusion-layer at the interface. A relatively high B concentration was found to lead to lower trap densities with preserved flatband voltage stability.