The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

11:15 〜 11:30

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

○Kento Narita1, Kosuke Ota1, Yu Fu1, Chiyuki Wakabayashi1, Atushi Hiraiwa1, Hiroshi Kawarada1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-02

We have fabricated oxidized Si termination (C-Si-O) diamond channel (001) vertical diamond MOSFETs with native oxide SiO2 as channel protection film formed by the ultrahigh vacuum Si molecular beam deposition (MBD) approaches. The maximum drain current density (ID,max) was 214 mA/mm, 5350 A/cm2, the on-resistance (Ron) was 8.1 mΩ·cm2, and the threshold voltage (Vth) was −4.5 V. By introducing the C-Si-O channel, the Vth shifted more than 20 V in the negative direction compared to conventional vertical devices with hydrogen-terminated (C-H) diamond channel, and this achieved the highest ID,max among the normally-off vertical diamond FETs.