The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:30 AM - 11:45 AM

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

○Xuezhen Jia1, Yukiko Suzuki1, Sukeyasu Deguchi2, Fuga Asai1, Akira Takahashi1, Atsushi Hiraiwa1, Junichi Kaneko2, Hiroshi Kawarada1,3 (1. School of Fundamental Science and Engineering Waseda Univ. (Japan), 2. School of Engineering Hokkaido Univ. (Japan), 3. Kagami Memorial Reasearch Inst. for Materials Science and Technology, Waseda Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-03

The effect of X-ray irradiation up to 3 MGy on 2DHG diamond MOSFETs with heavily boron-doped source and drain layers was presented with the change of drain current density and shift of threshold voltage. The radio frequency performance of irradiated devices was also evaluated. After 3MGy irradiation, the cut-off frequency fT and maximum oscillating frequency fmax were 10.9 GHz and 12.4 GHz at VDS = -40 V and VGS = 16 V for a device with LSD = 2 μm.