The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:15 PM - 2:30 PM

[N-7-03] High Performance Ga 2O 3 Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

○Mujun Li1, Minghao He2,1, Xiaohui Wang1, Qing Wang1, Kah-Wee Ang2, Hongyu Yu1 (1. Southern Univ. of Sci. and Tech. (China), 2. National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2023.N-7-03

This work reports a novel design for a Ga2O3 Schottky barrier diode (SBD) that utilizes patterned magnesium current blocking layer (Mg-CBL) rings. The Ga2O3 Mg-CBL is achieved using a Mg-rich spin-on-glass (Mg-SOG) technique, which offers a damage-free doping process. The Ga2O3 SBD with Mg-CBL rings achieves a remarkably high breakdown voltage (BV) of 2,290 V, resulting in a high power figure of merit (PFOM) of 0.992 GW/cm2. These findings underscore the immense potential of the Mg-CBL ring design for high-power applications.