A Simulation Study of Vertical Ga <sub>2</sub>O <sub>3</sub> Schottky Barrier Diodes Using Field Plate Termination

Yohei Yuda

doi:https://doi.org/10.7567/SSDM.2023.N-7-04

14:30 〜 14:45

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination

^○Yohei Yuda¹, Kohei Ebihara¹, Takuma Nanjo¹, Masayuki Furuhashi¹, Tatsuro Watahiki¹, Kazuyasu Nishikawa¹ (1. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-7-04

In this paper, we present a systematic development methodology for the β-Ga₂O₃ power device. We fabricated vertical Schottky barrier diodes (SBDs) having a single or double field plate (FP) and calibrated their breakdown criterion using the experimental results, setting an electric field criterion of 5.0 MV/cm for TCAD simulations. Based on this criterion, the double FP-SBDs with high breakdown voltage over 2000 V was realized.

2023 International Conference on Solid State Devices and Materials

[N-7-04] A Simulation Study of Vertical Ga 2O 3 Schottky Barrier Diodes Using Field Plate Termination

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination