The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:30 PM - 2:45 PM

[N-7-04] A Simulation Study of Vertical Ga 2O 3 Schottky Barrier Diodes Using Field Plate Termination

○Yohei Yuda1, Kohei Ebihara1, Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Kazuyasu Nishikawa1 (1. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-7-04

In this paper, we present a systematic development methodology for the β-Ga2O3 power device. We fabricated vertical Schottky barrier diodes (SBDs) having a single or double field plate (FP) and calibrated their breakdown criterion using the experimental results, setting an electric field criterion of 5.0 MV/cm for TCAD simulations. Based on this criterion, the double FP-SBDs with high breakdown voltage over 2000 V was realized.