The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:45 PM - 3:00 PM

[N-7-05] Theoretical Investigation of β-(Al xGa 1- x) 2O 3/Ga 2O 3 Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

○Xiaole Jia1, Yibo Wang1,2, Cizhe Fang1, Yan Liu1, Yue Hao1, Genquan Han1 (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2023.N-7-05

β-(AlxGa1-x)2O3/Ga2O3 (AlGaO/GaO) modulation-doped field-effect transistors (MODFETs) with a dual-metal-gate (DMG) architecture are designed, and the electrical characteristics of DMG devices are theoretically investigated in comparison with the single-metal gate (SMG) devices by the TCAD simulation. The simulated results demonstrate that the DMG MODFETs possess a superior transconductance (gm), current gain cut-off frequency (fT), and power gain cut-off frequency (fMAX), which is attributed to the regulated electric field in channel by the DMG structure. Furthermore, the geometrical parameters of DMG MODFETs are also optimized. With a gate length of 0.1 μm, the peak values of fT and fMAX are obtained as 49.4 GHz and 50.5 GHz, respectively. The AlGaO/GaO MODFET with DMG structure provides a promising strategy for high-power RF operation.