The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-1-03] Effects of HfO2 and ZrO2 Seed Layers on the Transition from Antiferroelectric (AFE) to Ferroelectric (FE) of Rich Zr Composition HfO2-based Film

○Peilin Zeng1, Yue Peng1, Wenwu Xiao2, Yan Liu1, Genquan Han1,3, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key aboratory,School of Microelectronics.Xidian University (China), 2. Xi’an UnilC Semiconductors CompanyLtd. (China), 3. Hangzhou Institute of Technology.Xidian University, Hangzhou (China))

In this paper, the effect of ZrO2 and HfO2 seed layers on the antiferroelectric (AFE) to ferroelectric (FE) transition of Hf0.3Zr0.7O2 films were systematically investigated. The Zr-rich HZO films grown on both ZrO2 seed layer and HfO2 seed layer exhibit antiferroelectric properties externally in the initial state, and the (Ps-Pr) value of ZrO2 SL is obviously greater than that of HfO2 SL,which indicate that the antiferroelectric property of ZrO2 SL is obviously stronger than that of HfO2 SL in the initial state. By FORC tests before and after applying 2.5V, 1kHz, 104cycles electrical pulse, we confirmed that electric field-induced AFE-FE transformation occurred in both ZrO2 SL and HfO2 SL, and the transformation of AFE-FE occurred in HfO2 SL was more thorough than that in ZrO2 SL. This work is helpful for improving the application of Hf0.3Zr0.7O2 films in future advanced nano-nodes.