Robustness of ferroelectric domain walls in Hf0.5Zr0.5O2 thin films investigated by ac-signal response of dielectric properties

Shinji Migita

doi:https://doi.org/10.7567/SSDM.2023.PS-1-07

[PS-1-07] Robustness of ferroelectric domain walls in Hf_0.5Zr_0.5O₂ thin films investigated by ac-signal response of dielectric properties

^○Shinji Migita¹, Shutaro Asanuma¹, Yukinori Morita¹, Hiroyuki Ota¹ (1. AIST (Japan))

https://doi.org/10.7567/SSDM.2023.PS-1-07

Dielectric properties of ferroelectric Hf_0.5Zr_0.5O₂(HZO) films are analyzed by capacitance-voltage meas- urements, and the character of ferroelectric domain walls in the HZO films is discussed. In contrast to the disper- sions of dielectric constants with frequencies and ac signal levels reported in Pb(Zr,Ti)O₃ films, those of HZO films are constant. This behavior suggests that the domain walls in HZO films are robust against perturbations and infers the advantage in application to advanced devices with low voltage operation.

2023 International Conference on Solid State Devices and Materials

[PS-1-07] Robustness of ferroelectric domain walls in Hf0.5Zr0.5O2 thin films investigated by ac-signal response of dielectric properties

[PS-1-07] Robustness of ferroelectric domain walls in Hf_0.5Zr_0.5O₂ thin films investigated by ac-signal response of dielectric properties