[PS-1-09] Mobility Modeling of Nanosheet FET’s using Poisson-Schroedinger, Cellular Automaton Coupled Approach
Basic knowledge of mobility is important for the development of nanosheet transistors. Mobility is derived in principle from the Boltzmann transport equation. The authors combined the Poisson-Schroedinger method and the cellular automaton method to calculate the mobility of the two-dimensional electron gas in the nanosheet transistor stably. The trends obtained for the relationship between mobility and nanosheet thickness are reported.