Comparative Study of Radiation Damage Effects on FinFET and GAAFET

Ching-Hung Chang

doi:https://doi.org/10.7567/SSDM.2023.PS-1-10

[PS-1-10] Comparative Study of Radiation Damage Effects on FinFET and GAAFET

^○Ching-Hung Chang¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

https://doi.org/10.7567/SSDM.2023.PS-1-10

In this work, a Co-60 radiation with different total ionizing doses was applied on planer MOSFET, FinFET, and GAAFET, respectively. Unlike reports by simulation study, the performance degradation caused by radiation damage on multi-gate MOS devices is surprisingly less than expected. The results shall provide important guidelines for designing the radiation hardened multi-gate MOS device.

2023 International Conference on Solid State Devices and Materials

[PS-1-10] Comparative Study of Radiation Damage Effects on FinFET and GAAFET