[PS-1-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge
An O3 plasma treatment on Ge was proposed for Ge MOS device. Due to the reduction of unstable GeOX, a Ge p-substrate MOS device with O3+H2 plasma treatment exhibits an ultra-thin EOT value, an acceptable gate leakage current, a lower DIT value and fewer border traps. Also, a highest ION, a lowest S.S. value, and a highest ION/IOFF of Ge nMOSFET are obtained with O3+H2 plasma treatment.