Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

Dian Budiarti Kastian

doi:https://doi.org/10.7567/SSDM.2023.PS-10-04

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-10-04

We successfully fabricated bottom-gate top-contact a-IGZO TFT with bilayer high-dielectric-constant (high-k) Al₂O₃ and HfO₂ gate insulator. We compared the performance of the bilayer gate insulator with the monolayer high-k gate insulator and also analyzed which high-k material forms a better interface with IGZO. The best results were obtained with a bilayer gate insulator which achieved the highest mobility value of 7.03 ± 0.90 cm²/Vs, low leakage current of ~10^-8A, threshold voltage of -0.3 V, corresponding to a smooth HfO₂/IGZO interface and high-k.

2023 International Conference on Solid State Devices and Materials

[PS-10-04] Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors