The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-10-05] Characterization of Metal/IGZO Contact with Back-to-Back Schottky Diode

○Shujuan Mao1, Jianfeng Gao2, Weibing Liu2, Yanping He2, Xu Chen2, Gaobo Xu2, Jinbiao Liu2, Junfeng Li2, Jun Luo2, Jing Zhang1, Yuke Li1, Xiangsheng Wang1, Wei Yu1, Chao Tian1, Hongbo Sun1, Jinjuan Xiang1, Guilei Wang1, Chao Zhao1 (1. Beijing Superstring Academy of Memory Technology (China), 2. Institute of Microelectronics, Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2023.PS-10-05

Ti, Mo, and TiN contacting on IGZO are investigated with a special back-to-back Schottky diode featuring a rectifying character. All metals are oxidized to some degree at contact interface, and the most oxidation occurs for Ti giving rise to an inferior electron injection efficiency. TiN contact formed by chemical vapor deposition (CVD) process shows a lower contact resistance due to H incorporation compared to physical vapor deposition (PVD) counterpart. In addition, the influence of standard forming gas anneal (FGA) on contact performance is further explored for the sake of monolithic 3D integration.