Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at V<sub>D</sub> = 2 V

dengqin xu

doi:https://doi.org/10.7567/SSDM.2023.PS-10-07

[PS-10-07] Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at V_D = 2 V

^○dengqin xu¹ (1. peking Univ (China))

https://doi.org/10.7567/SSDM.2023.PS-10-07

Nanoscale short-channel oxide thin film transistors (TFTs) have attracted widespread research interest due to their potential applications in advanced display and memory devices. In this work, we successfully fabricate 150-nm channel length indium-tin-oxide (ITO) TFTs with an on-state cur-rent of 325 (μA/μm) and a subthreshold swing (SS) of 152 (mV/decade) at drain voltage of 2 V.

2023 International Conference on Solid State Devices and Materials

[PS-10-07] Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at VD = 2 V

[PS-10-07] Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at V_D = 2 V