In this study, a single crystalline two-dimensional layered semiconductor, germanium monosulfide (GeS) was successfully synthesized by utilizing a self-built vapor transport equipment. The morphology of the synthesized GeS was evaluated by scanning electron microscopy with an energy-dispersive X-ray detector. Crystallization and anisotropic behaviors of the synthesized GeS were investigated by Raman microscopy. In addition, the single crystalline structure was characterized by transmission electron microscopy. The maximum size of the observed single crystalline GeS was about 20 µm. The GeS semiconductor with a layered structure and an anisotropic behavior shows major potential for development of next-generation transistors, photodetectors, and light-emitters.