[PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing
High-speed thin (<20 nm) channels are required to
fabricate fully-depleted transistors for advanced
electronics. Poly-Ge films are attractive for this purpose
due to the high carrier mobility compared with Si.
However, carrier mobility of the films decreases with
decreasing thickness, because grain sizes decrease. To
mitigate this problem, thinning of thicker films (50 nm
thickness) with large grain sizes is examined. Moreover,
post-annealing decreases the trap densities at grain
boundaries. These result in high carrier mobility (200
cm2/Vs) for thin films (20 nm thickness). A good transistor
operation is demonstrated using the thin films.
fabricate fully-depleted transistors for advanced
electronics. Poly-Ge films are attractive for this purpose
due to the high carrier mobility compared with Si.
However, carrier mobility of the films decreases with
decreasing thickness, because grain sizes decrease. To
mitigate this problem, thinning of thicker films (50 nm
thickness) with large grain sizes is examined. Moreover,
post-annealing decreases the trap densities at grain
boundaries. These result in high carrier mobility (200
cm2/Vs) for thin films (20 nm thickness). A good transistor
operation is demonstrated using the thin films.