[PS-11-06] Large-area and phase-controlled MoTe2 grown by cold-wall chemical vapor deposition on different substrates
This study uses cold-wall CVD to grow the two-dimensional material of MoTe2 with large-area continuous films on 2-inch silicon and sapphire substrates. The high-quality and large-area few-layer MoTe2 thin films with different phases( i.e., 1T' or 2H), determined by Raman spectroscopy, were obtained by controlling growth conditions. The results from the measurements of AFM show that the thickness of these MoTe2 is about 3~6 nm. In addition, Hall-effect measurements show that these MoTe2 thin films possess p-type properties with mobility and hole concentration of approximately 4.7 cm2/v-s and 2.9x1019/cm3, respectively.