[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS2/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy
Molybdenum disulfide (MoS2) is a two-dimensional (2D) semiconductor bonded to each other with weak van der Waals forces, and gallium nitride (GaN) is a promising wide-bandgap compound semiconductor. In this report, GaN thin films were grown on 2D MoS2 by plasma-assisted molecular beam epitaxy at different substrate temperatures (500, 600 and 700 oC) to fabricate MoS2/GaN heterojunction. The energy band diagrams of MoS2/GaN heterojunction grown at different temperatures were analyzed by X-ray photoelectron spectroscopy. The straddling relation, type-I, between narrow-bandgap MoS2 and wide-bandgap GaN can be observed at the optimized growth condition.