[PS-11-14] Optoelectronic properties of Ge1−xSnx/high-Si-content SiyGe1−y− zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing
We investigated the crystalline and photoluminescence (PL) properties of Ge1−xSnx/high-Si-content SiyGe1−y−zSnz double quantum wells (DQWs) grown by molecular beam epitaxy (MBE) featuring the growth temperature. We found that lower temperature MBE growth at 100 °C showed superior DQW crystallinity with a uniform and steep interface, resulting in superior PL performance compared to the 140 °C growth. Further, we found that the sufficient annealing process up to 350 °C to the DQW grown at 100 °C can improve its PL performance without any crystalline degradation.