The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

ARUN KUMAR DHASIYAN

doi:https://doi.org/10.7567/SSDM.2023.PS-11-19

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○ARUN KUMAR DHASIYAN¹, Swathy Jayaprasad¹, Frank Wilson Amalraj¹, Naohiro Shimizu¹, Osamu Oda¹, Kenji Ishikawa ¹, Masaru Hori¹ (1. Center for Low-temperature Plasma Sciences, Nagoya University (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-19

Gallium Nitride (GaN) is a widely used material for light-emitting diodes (LEDs) and laser diodes (LDs) and a promising material for high electron mobility transistors (HEMTs). Radical-enhanced metal-organic chemical vapor deposition (REMOCVD) technique, which was developed in our laboratory, is a promising method to grow group-III nitride materials at lower temperatures without any ammonia gas. The V/III ra-tio is one of the key factors in achieving good crystal quality GaN. This study shows the relationship between plasma power (concerned with the V/III ratio due to nitrogen radical density) and the epitaxial crystal quality. It was found that the crystal quality was im-proved with the increase of RF power to 800W. By REMOCVD we have achieved the single crystalline GaN by optimizing the V/III ratio.

2023 International Conference on Solid State Devices and Materials

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)