[PS-2-03] Physical Insights into Depolarization Field, Sweeping Speed and Interfacial Layer Effect of 4.5V Ultra-Wide Memory Window and Long Endurance Ferroelectric HZO Memory
In this study, we used AlON and AlOx as the interfacial layer (IL) in ferroelectric memories to achieve ultra-wide memory window (MW=4.5V) and endurance up to 108. By adjusting the thickness of the IL, the voltage drop across the IL and the depolarization field inside HZO are affected, which increases the MW. In addition, the depolarization field also affects the operating speed of the ferroelectric memory. This work provides design guidelines for ultra-wide MW memories.