The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO2-HfO2-ZrO2 Superlattice Gate Dielectric

Kaixuan Li1, Yue Peng1, wenwu xiao2,1, Yan Liu1, Genquan Han1, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China))

In this paper, the influence of the HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice films on the ferroelectric properties and reliability of Germanium ferroelectric field-effect transistors (FeFET) was studied. Compared with the ZHZ Ge-FeFETs, a prounced interface defect charges were produced at Ge/SL interface of the HZH Ge-FeFET, which degraded the stability of the memory window for the HZH Ge-FeFET. This study is helpful for understanding and optimizing the HfO2-based FE films for non-volatile memory applications.