Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

Seung Ji Bae

doi:https://doi.org/10.7567/SSDM.2023.PS-2-18

[PS-2-18] Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

^○Seung Ji Bae¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Min Seok Kim¹, Jeong Woo Hong¹, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.PS-2-18

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon metal-oxide-semiconductor field-effect transistor with a separated channel layer and a fin-shaped storage layer was proposed and analyzed. The memory performance is improved by a fin-shaped storage layer and a region separated into a channel layer and a storage layer. The proposed 1T-DRAM achieved the high sensing margin of 19.09 μA/μm and the long retention time of 525 ms at T = 358 K.

2023 International Conference on Solid State Devices and Materials

[PS-2-18] Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer