The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-2-23] Improved Synaptic Plasticity of Li Ion-Gated Transistors with Mg-Doped LiCoO2 Channel for Neuromorphic Computing

○Samapika Mallik1, Tohru Tsuruoka2, Takashi Tsuchiya3, Kazuya Terabe 4 (1. National Inst. for materials sci. (Japan), 2. National Inst. for materials sci. (Japan), 3. National Inst. for materials sci. (Japan), 4. National Inst. for materials sci. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-2-23

We investigated the effect of Mg doping to a LiCoO2 channel on the synaptic plasticity of a Li ion-gated transistor. Mg doping increased the initial channel conductance (nearly three orders of magnitude), due to substitution of Co3+ by Mg2+ and compensation of hole creation. The Mg-doped channel transistor showed more linear conductance change than the undoped channel transistor in response to gate voltage pulses. Artificial neural network simulations using long-term plasticity of the doped channel transistor showed recognition accuracy of ~80% for handwritten digits, which is higher than ~65 % with the undoped channel transistor.