Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

Sachika Nagamizo

doi:https://doi.org/10.7567/SSDM.2023.PS-4-06

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

^○Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-06

The electronic states in 4H-SiC MOS inversion layers are calculated based on the empirical pseudopotential method. The probability density function and the subband energies of the electronic states are investigated. The Wannier-Stark localization is observed in the electronic states in the inversion layer.

2023 International Conference on Solid State Devices and Materials

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer