The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-4-09] High Quality GaN Epitaxy and SAW Resonators on Sapphire Substrates with Cross-Stacked Carbon Nanotube Films

○lei xiao1, Guofang Yu1, Renrong Liang1, Jun Xun1, Yang Wei1, Jing Wang1 (1. Univ. of Tsinghua (China))

https://doi.org/10.7567/SSDM.2023.PS-4-09

A carbon nanotube-patterned sapphire substrate (CNTPSS) has been utilized for the growth of GaN material by MOCVD. The SAW resonators using the GaN on CNTPSS are fabricated and characterized. The XRD results show the crystal quality of the GaN film on CNTPSS has been improved, compared with those on a conventional sapphire substrate (CSS). Performances of the SAW resonators on CNTPSS were also enhanced, with the quality factor at series resonant frequency (Qs) increase of 33%. The introduction of carbon nanotubes (CNTs) films advances the crystal quality of GaN epitaxial layer, thus improving the performance of the SAW resonators.