Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

Ming-Wen Lee

doi:https://doi.org/10.7567/SSDM.2023.PS-4-11

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

^○Ming-Wen Lee^1,2, Yueh-Chin Lin¹, Cheng-Wei Chuang¹, Edward Yi Chang^1,3 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Department of Electronics and Computer Technology, Univ. of Granada (Spain), 3. Inst. of Microengineering and Nanoelectronics, Univ. Kebangsaan Malaysia (Malaysia))

https://doi.org/10.7567/SSDM.2023.PS-4-11

The ohmic etched pattern (OEP) design and fabrication of AlGaN/GaN high-electron mobility transistors (HEMTs) is developed for K- and Ka-band applications. The impact of four different OEPs on 150-nm AlGaN/GaN HEMTs is discussed. The optimized minimum noise figure (NF_min) of 1.44 dB and 1.75 dB has been measured at 18 and 28 GHz, respectively. The key factor for the improvement in NF_min with fabricated OEP structure is the reduction in specific contact resistivity (r_c) from 2.73×10^-6 to 4.04×10^-7 ohm×cm², which isas high as 85% with the best OEP structure discussed in this study.

2023 International Conference on Solid State Devices and Materials

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs