Improvement of Noise and Output Power Performance in GaN HEMT with Thick Cu-Interconnection for Satellite System Applications

Po-Wei CHEN

doi:https://doi.org/10.7567/SSDM.2023.PS-4-13

[PS-4-13] Improvement of Noise and Output Power Performance in GaN HEMT with Thick Cu-Interconnection for Satellite System Applications

^○Po-Wei CHEN¹, Chieh Cheng¹, Yueh-Chin Lin¹, Edward Yi Chang¹ (1. Univ. National Yang Ming Chiao Tung (Taiwan))

https://doi.org/10.7567/SSDM.2023.PS-4-13

In this study, the RF performances of GaN HEMTs have been improved with the utilization of 6μm-thick Cu-interconnection. The fT and fmax of the devices increased from 36.2 to 42.8 GHz and 152.58 to 183.23 GHz, respectively. Additionally, noise characteristics and the power performance of the device showed an improvement. NFmin decreased from 0.96 to 0.71 dB at 12 GHz and 2.47 to 2.19 dB at 28 GHz for the 2x50 μm device. 55 % enhancement of Pout,max and 31% enhancement of PAEmax can be also achieved by reducing Rs and Rd.

2023 International Conference on Solid State Devices and Materials

[PS-4-13] Improvement of Noise and Output Power Performance in GaN HEMT with Thick Cu-Interconnection for Satellite System Applications