The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth

Ruifeng Xu1, ○Jiawei Fan1, Masakazu Arai2, Yasuyuki Miyamoto1 (1. Tokyo Tech (Japan), 2. Miyazaki Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-16

A p-GaAsSb/i-InGaAs tunnel FET with a regrown p-source was fabricated. The linking between single-crystal and poly-crystal on the SiO2 mask can be prohibited when the SiO2 mask in the regrowth was thicker than the regrown GaAsSb layer and the edge of the grown region after etching of the SiO2 mask became smooth. Ambipolar current due to the p-type source was also observed.