[PS-8-01] High-performance 2D/3D Heterostructure Photodetectors
Photodetectors (PDs) based on two-dimensional (2D) materials are attracting great interest due to the exotic properties of 2D materials and their tunable spectral response. In particular, for their practical application, their merging into Si-CMOS technology is essential [1]. Here, we report high-performance, self-driven, and broadband PDs based on 2D materials such as PtSe2 and 3D materials such Si and Ge. We find that the performance of the PDs depends upon the thickness of the PtSe2 due to the variation of its bandgap and the absorption property. The PDs exhibit excellent photoresponse as tested in the wavelength of 375 nm - 2000 nm. The PtSe2/ultrathin SiO2/Si PD with 12.42 nm thick PtSe2 film exhibits a prominent responsivity of 4.48 A W−1 and a high specific detectivity of 2.25 × 1013 cm Hz1/2/W at 808 nm, an extremely low dark current of 0.12 pA at zero bias. We will also present our studies of the PDs with gate modulation and heterostructure PDs formed with Ge to tailor the spectral response [2-3]. The fabrication processes of our PDs are fully compatible with Si-CMOS technology.