The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:40 〜 13:42

[SO-PS-01-06] Investigation of SiGe/Si Super Lattice GAAFET and CMOS Inverter

○Heng- Jia Chang1, Yi-Ju Yao2, Ching-Ru Yang1, Ting-Yu Tseng1, Tsai-Jung Lin2, Guang-Li Luo3, Fu-Ju Hou3, Yung-Chun Wu1 (1. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 2. College of Semiconductor Research, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

This study introduces a 3-stacked SiGe/Si super-lattice channel GAAFET grown by LPCVD epitaxy. The SL GAAFET shows improved electrical characteristics, including higher ION/IOFF ratio, and lower subthreshold slope (SS). Furthermore, thorough demonstrations of SL-GAAFET CMOS inverter are also provided. The proposed SL-GAAFET is compatible with the current Si-based technology platform, indicating its potential for extending CMOS scaling.