The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:52 〜 13:54

[SO-PS-01-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

○Cheng-Hsueh Wu1, Kuei-Shu Chang-Liao1, Dun-Bao Ruan2 (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

An O3 plasma treatment on Ge was proposed for Ge MOS device. Due to the reduction of unstable GeOX, a Ge p-substrate MOS device with O3+H2 plasma treatment exhibits an ultra-thin EOT value, an acceptable gate leakage current, a lower DIT value and fewer border traps. Also, a highest ION, a lowest S.S. value, and a highest ION/IOFF of Ge nMOSFET are obtained with O3+H2 plasma treatment.