The Japan Society of Applied Physics

13:36 〜 13:38

[SO-PS-02-04] Remnant Polarization Enhancement in Ferroelectric HfO2 Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

Tatsuya Inoue1, Takashi Onaya2, Koji Kita1,2 (1. Dept. of Materials Engineering, The Univ. of Tokyo (Japan), 2. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan))

By a mechanical bending, a uniaxial strain was directly applied to Au/HfO2/TiN metal-ferroelectric-metal (MFM) capacitors, to investigate the effect of starin on the ferroelectricity of HfO2 thin films. An enhancement of remnant polarization was clearly observed by applying mechanical tensile strain during electric field cycling.