13:36 〜 13:38
[SO-PS-02-04] Remnant Polarization Enhancement in Ferroelectric HfO2 Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching
By a mechanical bending, a uniaxial strain was directly applied to Au/HfO2/TiN metal-ferroelectric-metal (MFM) capacitors, to investigate the effect of starin on the ferroelectricity of HfO2 thin films. An enhancement of remnant polarization was clearly observed by applying mechanical tensile strain during electric field cycling.
