The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:40 〜 13:42

[SO-PS-02-06] Bilayer Type of Hf1-xZrxO2-based Ferroelectric and Anti-ferroelectric Tunneling Junction

○Fu- Sheng chang2, Kuo-Yu Hsiang3,1, Jia-Yang Lee1, Zhao-Feng Lou1, Zong-Han Li4, Jia-Hong Chen4, Cheng-Hong Liu1, Ming Han Liao5, Chee Wee Liu1,2, Min Hung Lee1 (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Graduate Institute of Electronics Eng., National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung University (Taiwan), 4. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 5. Department of Mechanical Eng., National Taiwan Univ. (Taiwan))

Abstract—Hf1-xZrxO2-based ferroelectric (FE) and anti-ferroelectric (AFE) tunneling junction with dielectric (DE) Al2O3 has been investigated for high current ratio. The current mechanism is revealed for improvement on off-state. The proposed bilayer-type of AFE 10 nm and DE 2 nm is demonstrated with a maximum current ratio of 380 times and validated the tunneling-based current for high-density non-volatile memory (NVM) applications.