In this paper, the bulk fin-type field-effect transistor (FinFET)-based the capacitorless one-transistor dynamic random access memory (1T-DRAM) is proposed and analyzed. We have studied the transfer characteristics and the memory performances of the bulk FinFET-based 1T-DRAM depending on the geometrical variations such as the fin angle (θ_Fin) variation and the line edge roughness (LER). Consequently, we discovered that the geometrical variations affected the transfer characteristics of the bulk FinFET.