High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

CHENG- RUI LIU

14:10 〜 14:12

[SO-PS-02-21] High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

^○CHENG- RUI LIU¹, SHENG-MIN WANG¹, YU-TING CHEN¹, SHAO-CHEN LEE¹, YING-TSAN TANG¹ (1. National Central Univ. (Taiwan))

This study demonstrated the first MFS FeCAP with angstrom layer(AL) deposition of cycling HfO2/ZrO2 on a-IGZO channel material. MFS structure showed 2Pr>15µC/cm₂ and large 2Ec>4.4 MV/cm after annealing at 350^oC. The memory structure had 3-bits/cell storage, 25ns read/write speed (at 3V), and >1E6 endurance. These results suggest that FeFETs with a-IGZO channels show great potential for future 3D-FeNAND memory and AIOT device applications.

2023 International Conference on Solid State Devices and Materials

[SO-PS-02-21] High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget