The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

2:14 PM - 2:16 PM

[SO-PS-02-23] Improved Synaptic Plasticity of Li Ion-Gated Transistors with Mg-Doped LiCoO2 Channel for Neuromorphic Computing

○Samapika Mallik1, Tohru Tsuruoka2, Takashi Tsuchiya3, Kazuya Terabe 4 (1. National Inst. for materials sci. (Japan), 2. National Inst. for materials sci. (Japan), 3. National Inst. for materials sci. (Japan), 4. National Inst. for materials sci. (Japan))

We investigated the effect of Mg doping to a LiCoO2 channel on the synaptic plasticity of a Li ion-gated transistor. Mg doping increased the initial channel conductance (nearly three orders of magnitude), due to substitution of Co3+ by Mg2+ and compensation of hole creation. The Mg-doped channel transistor showed more linear conductance change than the undoped channel transistor in response to gate voltage pulses. Artificial neural network simulations using long-term plasticity of the doped channel transistor showed recognition accuracy of ~80% for handwritten digits, which is higher than ~65 % with the undoped channel transistor.