14:16 〜 14:18
[SO-PS-02-24] Positive Feedback Field Effect Transistor Based on Vertical NAND Flash Structure for In-Memory Computing
The distance between memory and CPU has led to a memory wall. To solve it, an In-memory technology that performs both memory and computation has been studied. In this paper, we propose a positive feedback field-effect transistor based on a vertical NAND flash structure that can simultaneously perform memory and computation to implement ideal in-memory computing. By selecting the operation control gate bias, processing operations can be reconfigured into AND or OR operations, memory can be performed by accumulating charges on body, and logic operations can be performed by reading data stored in the charge trap layer.