13:34 〜 13:36
[SO-PS-03-03] On the Study of ESD-Induced Electromigration in CMOS Metallization
The design of on-chip electrostatic discharge (ESD) protection has been receiving increasing attention. How-ever, there are fewer research studies on the metallization of ESD protection. This work analyzes the electromigra-tion (EM) of metallization induced by ESD. The sensitivi-ty of metals to a system-level ESD was discovered, and the ESD robustness of metals was tried to be predicted in this work. The analysis and discussion in this paper help the design of metallization for ESD protection.
