1:32 PM - 1:34 PM
[SO-PS-04-02] Investigation of Problems with Current Filament Simulation Model for Two-dimensional Multi-cell Structure in IGBTs
Recently technology CAD (TCAD) simulations in 2D multi-cells are frequently performed to investigate the behavior of current filaments in various power device structures. Especially in these simulations, the results should be carefully analyzed in order to reach the correct conclusions for device design. This study takes as an example the simulation of overcurrent turnoff phenomena in three types of IGBT structures that differ only in the surface hole removal layer. We show that simulation results may differ due to modeling methods, even under the conditions where the simulation results should be the same. We also show simulation results for a 3D structure where the 2D problem does not occur.