The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

1:34 PM - 1:36 PM

[SO-PS-04-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang1,2, Xiaoli Tian1, ○Wei Wei1,2, Yun Bai1, Jilong Hao1, Chengyue Yang1, Yidan Tang1, Xinyu Liu1 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

In this paper, a silicon carbide p-channel insulated gate bipolar transistor with two n-type implant regions introduced in the JFET area to reduce the reverse transfer capacitance (Crss) and gate oxide electric field (Eox) is proposed. The VF·Crss figure of merit (FOM) is defined to evaluate the trade-off between the on-state characteristics and the Crss characteristics. Compared with the conventional IGBT, the proposed structure effectively reduces the Eox below 3 MV/cm, increases the BV to 16.6 kV and achieves a lower FOM with a reduction of 52.7%. Meanwhile, fast switching characteristics can be obtained in the proposed structure.