Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

Kazuhiro “-” TANAKA

13:36 〜 13:38

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

Stacking faults have been identified the killer defects in 4H-SiC power devices because of their impacts on the carrier lifetime. Stacking faults can be considered as polytype inclusions in 4H-SiC. Therefore, in this study, we characterized recombination coefficients for 3C- and 6H-SiC and compared with those for 4H-SiC.

2023 International Conference on Solid State Devices and Materials

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC