The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:40 〜 13:42

[SO-PS-04-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

○Sachika Nagamizo1, Hajime Tanaka1, Nobuya Mori1 (1. Osaka Univ. (Japan))

The electronic states in 4H-SiC MOS inversion layers are calculated based on the empirical pseudopotential method. The probability density function and the subband energies of the electronic states are investigated. The Wannier-Stark localization is observed in the electronic states in the inversion layer.