The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:48 〜 13:50

[SO-PS-04-10] AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

○Bing- Syuan Li1, Tsung-Han Chiang2, You-Chen Weng3, Tsung-Ying Yang2, Edward Yi Chang2,4, Chin-Han Chung2, Michel Khoury5, Helen Zhao5 (1. Master’s Degree Program of Applied Science and Technology, College of Science, National Yang Ming Chiao Tung Univ. (Taiwan), 2. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 3. College of Photonics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Applied Materials, Ltd. (United States of America))

In this work, an AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor (MIS-HEMT) is presented using a 200-mm physical vapor deposition (PVD)-grown AlN-on-Si substrate with a thick GaN buffer layer (total thickness > 5 μm) which enabled a high vertical breakdown voltage (Vbd). The full width at half maximum (FWHM) of GaN(0002) and (1-102) were 604 and 1365 arcsec, respectively, and the Vbd exceeded 700 V. The fabricated device adopting the proposed structure exhibited an enhanced output current density (ID) up to 845 mA/mm. These results indicated the great potential of the PVD-grown AlN-on-Si substrate for power HEMT applications.