13:40 〜 13:42
[SO-PS-05-06] Improved Optical Performance of Light-Emitting HEMT with Low Temperature Growth of Single Quantum Well
In this study, light-emitting HEMTs (LE-HEMT) with different growth conditions for a single quantum well inserted in the epitaxy structures are fabricated and analyzed. According to the experimental results, the mainly light-emitting wavelength is shifted from 510 nm in green light range to 410 nm in blue light range when the single quantum well growth temperature is lower and closer to that of a conventional GaN LED. As a result, Epi B, which was grown at a lower temperature compared to Epi A, shows a better light intensity with an improved full width at half maximum (FWHM).