We present Gallium Phosphide heterostructures grown on Indium Phosphide Nanowires (GaP/InP NWs) that exhibit visible emission ranging between 540 and 620 nm. The photoluminescence mapping indicates that the emission is concentrated in the two GaP segments, whereas the InP parts outside the GaP segments produce 870 nm emission. Additionally, the GaP/InP NWs show polarization dependence with the emission polarized parallel to the NW axis. These NWs can serve as movable cavities in pho-tonic crystals, providing the ability to regulate light emis-sion in integrated hybrid systems. This advancement could allow for high-density photonic networks in proces-sor chips with ultra-small photonic devices.