High-efficient lattice-mismatched solar cells still have a problem with nonuniform open-circuit voltage (V_OC) in the wafer plane. This is due to the anisotropy of the glide planes of misfit dislocations. We investigated the relationships between the distribution of the misfit dislocation and the carrier dynamics of InGaAs solar cells using laser heterodyne photothermal displacement (LH-PD) mappings and photoluminescence (PL) measurements. Since the decreased LH-PD and PL signal intensities were due to the distribution of the preferential glide plane of β dislocation, we confirmed that such dislocations resulted in the lower V_OC of the cell structure.