13:36 〜 13:38
[SO-PS-06-04] Cell Performance Recovery from Potential-Induced Degraded p-type Based Polycrystalline Si Photovoltaic Modules by Reverse Bias-Pulse-Voltage Method
The potential-induced degradation (PID) is a phenomenon in which Na ions inside the module penetrate the polycrystalline (poly-Si) and single crystalline silicon (c-Si) solar cell, resulting in a significant reduction in photoelectric conversion capacity, and is considered one of the major problems in the operation of solar power generation facilities. This study investigates the application of reverse pulse voltage (V RBP) as a short-time recovery method for poly-Si solar cell modules that have experienced PID. This method does not require external process temperature control and is different from the conventional method of applying a high electric field to the entire module.