Multistate resistive memory devices bear great prom-ise amongst devices being implemented in memory tech-nology for high-density data storage. The resistive states of these organic memories can be tuned by changing the thickness of the semiconducting polymer (SCP) layer. We have demonstrated multistate organic resistive switching memory devices utilizing 3, 4 and 5 layers of solution-processed oriented floating films. Individual memory devices fabricated exhibited a remarkably high on-off ratio of 10^5. A multi-level switching was obtained by fabricating the 3 and 5-layered devices in tandem.